Open AccessSelective release of InP heterostructures from InP substrates
Author(s) -
Tzu-Hsuan Chang,
Wenjuan Fan,
Dong Liu,
Zhenyang Xia,
Zhenqiang Ma,
ShihChia Liu,
Laxmy Me,
Hongjun Yang,
Weidong Zhou,
J. Berggren,
Mattias Hammar
Publication year - 2016
Publication title -
journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.4958799
Subject(s) - polydimethylsiloxane , materials science , heterojunction , optoelectronics , substrate (aquarium) , photoluminescence , etching (microfabrication) , membrane , indium phosphide , photonics , layer (electronics) , quantum well , nanotechnology , gallium arsenide , optics , chemistry , laser , biochemistry , oceanography , physics , geology
The authors report here a method of protecting the sidewall for the selective release of InGaAsP quantum-well (QW) heterostructure from InP substrates. An intact sidewall secured by SiO2 was demonstrated during the sacrificial layer selective etching, resulting in the suspended InGaAsP QW membranes which were later transferred to the Si substrate with polydimethylsiloxane stamp. The quality of the transferred InGaAsP QW membranes has been validated through photoluminescence and EL measurements. This approach could extend to arbitrary targeting substrate in numerous photonics and electronics applications.
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