Planar regions of GaAs (001) prepared by Ga droplet motion | Zendy

Changxi Zheng | Zendy; W. X. Tang | Zendy; D. E. Jesson | Zendy

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Planar regions of GaAs (001) prepared by Ga droplet motion

Author(s) -

Changxi Zheng,

W. X. Tang,

D. E. Jesson

Publication year - 2016

Publication title -

journal of vacuum science and technology a vacuum surfaces and films

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.583

H-Index - 112

eISSN - 1520-8559

pISSN - 0734-2101

DOI - 10.1116/1.4948530

Subject(s) - planar , flatness (cosmology) , materials science , buffer (optical fiber) , diffraction , layer (electronics) , surface reconstruction , evaporation , optoelectronics , optics , surface (topology) , nanotechnology , physics , geometry , computer science , telecommunications , cosmology , quantum mechanics , thermodynamics , mathematics , computer graphics (images)

The authors describe a simple method for obtaining planar regions of GaAs (001) suitable for surface science studies. The technique, which requires no buffer layer growth, atomic hydrogen source, or the introduction of As flux, employs controllable Ga droplet motion to create planar trail regions during Langmuir evaporation. Low-energy electron microscopy/diffraction techniques are applied to monitor the droplet motion and characterize the morphology and the surface reconstruction. It is found that the planar regions exhibit atomic flatness at the level of a high-quality buffer layer.

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