Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors | Zendy

T. Hossain | Zendy; Daming Wei | Zendy; James H. Edgar | Zendy; N. Y. Garces | Zendy; Neeraj Nepal | Zendy; Jennifer K. Hite | Zendy; Michael A. Mastro | Zendy; Charles R. Eddy | Zendy; Harry M. Meyer | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors

Author(s) -

T. Hossain,

Daming Wei,

James H. Edgar,

N. Y. Garces,

Neeraj Nepal,

Jennifer K. Hite,

Michael A. Mastro,

Charles R. Eddy,

Harry M. Meyer

Publication year - 2015

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/1.4931793

Subject(s) - materials science , capacitor , surface roughness , x ray photoelectron spectroscopy , capacitance , optoelectronics , wide bandgap semiconductor , analytical chemistry (journal) , hysteresis , oxide , voltage , composite material , electrode , condensed matter physics , electrical engineering , chemical engineering , metallurgy , chemistry , physics , chromatography , engineering

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research