Open AccessSilicon etching in a pulsed HBr/O2 plasma. I. Ion flux and energy analysis
Author(s) -
M. Haass,
Maxime Dar,
Gilles Cunge,
O. Joubert,
David Gahan
Publication year - 2015
Publication title -
journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.4917230
Subject(s) - plasma , ion , duty cycle , atomic physics , flux (metallurgy) , etching (microfabrication) , materials science , plasma etching , silicon , analytical chemistry (journal) , chemistry , optoelectronics , voltage , nanotechnology , physics , organic chemistry , layer (electronics) , quantum mechanics , chromatography , metallurgy
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