Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices | Zendy

Preston T. Webster | Zendy; Nathaniel A. Riordan | Zendy; Chaturvedi Gogineni | Zendy; Shi Liu | Zendy; Jing Lu | Zendy; Xin-Hao Zhao | Zendy; David J. Smith | Zendy; YongHang Zhang | Zendy; S. R. Johnson | Zendy

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Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices

Author(s) -

Preston T. Webster,

Nathaniel A. Riordan,

Chaturvedi Gogineni,

Shi Liu,

Jing Lu,

Xin-Hao Zhao,

David J. Smith,

YongHang Zhang,

S. R. Johnson

Publication year - 2014

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/1.4868111

Subject(s) - bismuth , molecular beam epitaxy , materials science , photoluminescence , superlattice , lattice constant , epitaxy , ternary operation , antimony , optoelectronics , analytical chemistry (journal) , diffraction , nanotechnology , optics , chemistry , layer (electronics) , metallurgy , physics , chromatography , computer science , programming language

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