Open AccessInducing a junction in n-type InxGa(1−x)N
Author(s) -
J. J. Williams,
Todd L. Williamson,
Mark A. Hoffbauer,
Alec M. Fischer,
Stephen M. Goodnick,
N. N. Faleev,
Kunal Ghosh,
Christiana B. Honsberg
Publication year - 2013
Publication title -
journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.4797489
Subject(s) - materials science , band gap , optoelectronics , wide bandgap semiconductor , piezoelectricity , doping , indium , gallium nitride , light emitting diode , band bending , p–n junction , solar cell , diode , gallium , space charge , semiconductor , layer (electronics) , nanotechnology , composite material , physics , quantum mechanics , metallurgy , electron
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