Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon | Zendy

María Ángela Pampillón Arce | Zendy; Pedro C. Feijoo | Zendy; E. San Andrés | Zendy; M. L. Lucı́a | Zendy

Open Access

Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon

Author(s) -

María Ángela Pampillón Arce,

Pedro C. Feijoo,

E. San Andrés,

M. L. Lucı́a

Publication year - 2012

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/1.4769893

Subject(s) - materials science , sputtering , silicon , thin film , titanium , annealing (glass) , x ray photoelectron spectroscopy , analytical chemistry (journal) , optoelectronics , chemical engineering , composite material , nanotechnology , metallurgy , chemistry , chromatography , engineering

Gadolinium oxide thin films were deposited on silicon by a two-step process: high pressure sputtering from a metallic gadolinium target followed by an in situ plasma oxidation. Several plasma conditions for metal deposition and oxidation were studied in order to minimize the growth of a SiOx layer at the interface between the high permittivity dielectric and the silicon substrate and to avoid substrate damage. Plasma emission was studied with glow discharge optical spectroscopy. The films were structurally characterized by Fourier transform infrared spectroscopy. Metal-insulator-semiconductor capacitors were fabricated with two different top metals (titanium and platinum) to analyze the influence of deposition conditions and the metal choice. Pt gated devices showed an interfacial SiOx regrowth after a forming gas annealing, while Ti gates scavenge the interface layer

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