Influence of ionization degree on film properties when using high power impulse magnetron sputtering | Zendy

Mattias Samuelsson | Zendy; Daniel Lundin | Zendy; K. Sarakinos | Zendy; Fredrik Björefors | Zendy; Bengt Wälivaara | Zendy; H. Ljungcrantz | Zendy; Ulf Helmersson | Zendy

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Influence of ionization degree on film properties when using high power impulse magnetron sputtering

Author(s) -

Mattias Samuelsson,

Daniel Lundin,

K. Sarakinos,

Fredrik Björefors,

Bengt Wälivaara,

H. Ljungcrantz,

Ulf Helmersson

Publication year - 2012

Publication title -

journal of vacuum science and technology a vacuum surfaces and films

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.583

H-Index - 112

eISSN - 1520-8559

pISSN - 0734-2101

DOI - 10.1116/1.3700227

Subject(s) - high power impulse magnetron sputtering , sputter deposition , materials science , deposition (geology) , ionization , sputtering , cavity magnetron , analytical chemistry (journal) , ion , optoelectronics , thin film , chemistry , nanotechnology , environmental chemistry , paleontology , organic chemistry , sediment , biology

Chromium thin films are deposited by combining direct current magnetron sputtering and high power impulse magnetron sputtering (HiPIMS) on a single cathode in an industrial deposition system. While maintaining a constant deposition rate and unchanged metal ion energy distribution function, the fraction of the total power supplied by either deposition technique is altered, and thereby also the metal ion to metal neutral ratio of the deposition flux. It is observed that the required total average power needed to be proportionally increased as the HiPIMS fraction is increased to be able to keep a constant deposition rate. The influence on microstructure, electrical, and electrochemical properties of the films is investigated and shows improvements with the use of HiPIMS. However, considerable influence of the studied properties occurs already when only some 40% of the total power is supplied by the HiPIMS technique. Further increase of the HiPIMS power fraction results in comparatively minor influence of the studied properties yet significant deposition rate efficiency reduction. The results show that the degree of ionization can be controlled separately, and that the advantages associated with using HiPIMS can be obtained while much of the deposition rate reduction, often reported for HiPIMS, can be avoided.

Funding Agencies|Swedish Research Council (VR)|621-2005-3245621-2008-3222623-2009-7348|Swedish Foundation for Strategic Research||

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