Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy | Zendy

Jinchen Fan | Zendy; Lu Ouyang | Zendy; Xinyu Liu | Zendy; Ding Ding | Zendy; J. K. Furdyna | Zendy; David J. Smith | Zendy; YongHang Zhang | Zendy

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Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy

Author(s) -

Jinchen Fan,

Lu Ouyang,

Xinyu Liu,

Ding Ding,

J. K. Furdyna,

David J. Smith,

YongHang Zhang

Publication year - 2012

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/1.3681280

Subject(s) - molecular beam epitaxy , photoluminescence , materials science , transmission electron microscopy , diffraction , reflection high energy electron diffraction , electron diffraction , exciton , reflection (computer programming) , epitaxy , surface reconstruction , optoelectronics , analytical chemistry (journal) , optics , condensed matter physics , chemistry , nanotechnology , surface (topology) , physics , geometry , mathematics , layer (electronics) , chromatography , computer science , programming language

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