Open AccessStrain-balanced InAs/InAs1−xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates
Author(s) -
Elizabeth H. Steenbergen,
Kalyan Nunna,
Lu Ouyang,
B. Ullrich,
Diana L. Huffaker,
David J. Smith,
YongHang Zhang
Publication year - 2011
Publication title -
journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.3672028
Subject(s) - molecular beam epitaxy , superlattice , photoluminescence , materials science , strain (injury) , diffraction , infrared , epitaxy , optoelectronics , wavelength , band gap , optics , nanotechnology , physics , biology , layer (electronics) , anatomy
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom