Indium nitride epilayer prepared by UHV-plasma-assisted metalorganic molecule beam epitaxy | Zendy

WeiChun Chen | Zendy; ShouYi Kuo | Zendy; FangI Lai | Zendy; Woei-Tyng Lin | Zendy; ChienNan Hsiao | Zendy; Din Ping Tsai | Zendy

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Indium nitride epilayer prepared by UHV-plasma-assisted metalorganic molecule beam epitaxy

Author(s) -

WeiChun Chen,

ShouYi Kuo,

FangI Lai,

Woei-Tyng Lin,

ChienNan Hsiao,

Din Ping Tsai

Publication year - 2011

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/1.3622315

Subject(s) - indium nitride , molecular beam epitaxy , materials science , indium , crystallinity , transmission electron microscopy , scanning electron microscope , epitaxy , substrate (aquarium) , thin film , analytical chemistry (journal) , nitride , full width at half maximum , optoelectronics , nanotechnology , chemistry , composite material , layer (electronics) , oceanography , chromatography , geology

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