Novel postetch process to realize high quality photonic crystals in InP
Author(s) -
Naeem Shahid,
Shagufta Naureen,
M. Y. Li,
Marcin Świłło,
S. Anand
Publication year - 2011
Publication title -
journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.3574760
Subject(s) - materials science , photonic crystal , extinction ratio , fabrication , optoelectronics , annealing (glass) , photonic integrated circuit , photonics , wavelength , nanostructure , etching (microfabrication) , indium phosphide , optics , wafer , dry etching , nanotechnology , gallium arsenide , medicine , alternative medicine , physics , pathology , layer (electronics) , composite material
Thermally driven reflow of material during annealing was positively used to obtain near-vertical sidewall profiles for high-aspect-ratio nanostructures in InP fabricated by dry etching. This is ver ...
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