Understanding the relationship between true and measured resist feature critical dimension and line edge roughness using a detailed scanning electron microscopy simulator | Zendy

Richard A. Lawson | Zendy; Clifford L. Henderson | Zendy

Open Access

Understanding the relationship between true and measured resist feature critical dimension and line edge roughness using a detailed scanning electron microscopy simulator

Author(s) -

Richard A. Lawson,

Clifford L. Henderson

Publication year - 2010

Publication title -

journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.429

H-Index - 119

eISSN - 2166-2754

pISSN - 2166-2746

DOI - 10.1116/1.3517717

Subject(s) - resist , photoresist , scanning electron microscope , critical dimension , surface finish , materials science , optics , surface roughness , scattering , enhanced data rates for gsm evolution , secondary electrons , electron beam lithography , electron , nanotechnology , physics , layer (electronics) , composite material , computer science , artificial intelligence , quantum mechanics

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