Open AccessStudy of transport properties in graphene monolayer flakes on SiO2 substrates
Author(s) -
J. M. Tirado,
Daniel Nezich,
Xiaoming Zhao,
Jinwook Chung,
Jian Feng Kong,
Tomás Palacios
Publication year - 2010
Publication title -
journal of vacuum science and technology b nanotechnology and microelectronics materials processing measurement and phenomena
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.429
H-Index - 119
eISSN - 2166-2754
pISSN - 2166-2746
DOI - 10.1116/1.3516649
Subject(s) - graphene , electric field , materials science , electron mobility , carrier scattering , scattering , silicon , monolayer , condensed matter physics , electron , annealing (glass) , phonon scattering , phonon , electron transport chain , field effect transistor , transistor , optoelectronics , nanotechnology , voltage , chemistry , optics , physics , composite material , biochemistry , quantum mechanics
We investigate the carrier mobility in monolayer and bilayer graphene with a top HfO2dielectric, as a function of the HfO2film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first 2–4 nm of top dielectric and remains constant for thicker layers. The carrier mobility shows a relatively weak dependence on temperature indicating that phonon scattering does not play a dominant role in controlling the carrier mobility. The data strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for the mobility degradation.European Social FundConsejeria de Educacion y Ciencia de la Junta de Comunidades de Castilla-La ManchaMassachusetts Institute of Technology. Microsystems Technology Laboratorie
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