Open AccessMethod for improving the aspect ratio of ultrahigh-resolution structures in negative electron-beam resist
Author(s) -
Vadim Sidorkin,
Paul F. A. Alkemade,
H. W. M. Salemink,
R. Schmits,
E. van der Drift
Publication year - 2009
Publication title -
journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena
Language(s) - English
Resource type - Journals
eISSN - 1520-8567
pISSN - 1071-1023
DOI - 10.1116/1.3263171
Subject(s) - resist , hydrogen silsesquioxane , electron beam lithography , materials science , lithography , cathode ray , resolution (logic) , nanotechnology , beam (structure) , electron beam induced deposition , electron , optics , optoelectronics , computer science , physics , transmission electron microscopy , scanning transmission electron microscopy , layer (electronics) , quantum mechanics , artificial intelligence
A method for improving the aspect ratio of ultrahigh-resolution structures in negative electron-beam resist is provided for enhanced pattern-transfer capabilities. The essence of the proposed method is to form a protective “cap” on top of the resist structure by means of electron-beam-induced deposition (EBID) in a self-aligned approach. This is implemented by a combination of electron-beam lithography and EBID during exposure of the resist material in the presence of a precursor gas. The results of the proposed method using hydrogen silsesquioxane resist material are presented and discussed, including various attempts to further optimize this method.QN/Quantum NanoscienceApplied Science
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