Sub-10-nm nanolithography with a scanning helium beam
Author(s) -
Vadim Sidorkin,
Emile van Veldhoven,
E. van der Drift,
Paul F. A. Alkemade,
H. W. M. Salemink,
Diederik Maas
Publication year - 2009
Publication title -
journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena
Language(s) - English
Resource type - Journals
eISSN - 1520-8567
pISSN - 1071-1023
DOI - 10.1116/1.3182742
Subject(s) - hydrogen silsesquioxane , nanolithography , resist , materials science , lithography , helium , ion beam lithography , silsesquioxane , electron beam lithography , beam (structure) , hydrogen , nanotechnology , optoelectronics , optics , fabrication , polymer , atomic physics , chemistry , physics , medicine , organic chemistry , layer (electronics) , composite material , alternative medicine , pathology
Scanning helium ion beam lithography is presented as a promising pattern definition technique for dense sub-10-nm structures. The powerful performance in terms of high resolution, high sensitivity, and a low proximity effect is demonstrated in a hydrogen silsesquioxane resist.QN/Quantum NanoscienceApplied Science
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