z-logo
open-access-imgOpen Access
Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies
Author(s) -
Ana Božanić,
Zlatko Majlinger,
M. Petravić,
Qiang Gao,
D. Llewellyn,
C. Crotti,
Y.-W. Yang
Publication year - 2008
Publication title -
journal of vacuum science and technology a vacuum surfaces and films
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.583
H-Index - 112
eISSN - 1520-8559
pISSN - 0734-2101
DOI - 10.1116/1.2929851
Subject(s) - xanes , absorption (acoustics) , photoemission spectroscopy , x ray photoelectron spectroscopy , inverse photoemission spectroscopy , x ray absorption fine structure , spectral line , absorption spectroscopy , spectroscopy , analytical chemistry (journal) , electronic structure , nitrogen , x ray spectroscopy , semiconductor , resolution (logic) , materials science , absorption edge , binding energy , angle resolved photoemission spectroscopy , chemistry , atomic physics , nuclear magnetic resonance , band gap , optics , computational chemistry , optoelectronics , artificial intelligence , computer science , composite material , chromatography , quantum mechanics , physics , organic chemistry , astronomy
This work was supported by the Australian Synchrotron Research Program, which is funded by the Commonwealth of Australia under the Major National Research Facilities Program, and the Research Grant from the Ministry for Science, Education and Sport of the Republic of Croatia.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom