Boron nanobelts grown under intensive ion bombardment | Zendy

W. T. Li | Zendy; R. W. Boswell | Zendy; J. D. Fitz Gerald | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Boron nanobelts grown under intensive ion bombardment

Author(s) -

W. T. Li,

R. W. Boswell,

J. D. Fitz Gerald

Publication year - 2008

Publication title -

journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena

Language(s) - English

Resource type - Journals

eISSN - 1520-8567

pISSN - 1071-1023

DOI - 10.1116/1.2827498

Subject(s) - boron , materials science , evaporation , tetragonal crystal system , yield (engineering) , ion , ion beam , crystal (programming language) , crystal growth , substrate (aquarium) , nanotechnology , chemical engineering , analytical chemistry (journal) , crystallography , crystal structure , metallurgy , chemistry , geology , physics , oceanography , organic chemistry , chromatography , computer science , programming language , thermodynamics , engineering

High-quality α-tetragonal crystalline boron nanobelts with [001] growth axis were synthesized using a novel method combining e-beam evaporation and plasma ion bombardment techniques. Intensive ion bombardment of the growing boron nanobelts at a high substrate temperature (∼1200°C) was found to be effective in increasing the atomic density, reducing the crystal disorder, and improving the yield of the nanobelts.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research