Open AccessEffects of photoacid generator incorporation into the polymer main chain on 193nm chemically amplified resist behavior and lithographic performance
Author(s) -
Cheng-Tsung Lee,
Clifford L. Henderson,
Mingxing Wang,
Kenneth E. Gonsalves,
Wang Yueh
Publication year - 2007
Publication title -
journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena
Language(s) - English
Resource type - Journals
eISSN - 1520-8567
pISSN - 1071-1023
DOI - 10.1116/1.2801868
Subject(s) - resist , lithography , polymer , materials science , generator (circuit theory) , laser linewidth , ion , homogeneous , photoresist , nanotechnology , chemistry , optoelectronics , optics , composite material , organic chemistry , physics , laser , power (physics) , layer (electronics) , quantum mechanics , thermodynamics
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