Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers | Zendy

N. G. Rudawski | Zendy; K. S. Jones | Zendy; R. G. Elliman | Zendy

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Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers

Author(s) -

N. G. Rudawski,

K. S. Jones,

R. G. Elliman

Publication year - 2008

Publication title -

journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena

Language(s) - English

Resource type - Journals

eISSN - 1520-8567

pISSN - 1071-1023

DOI - 10.1116/1.2775459

Subject(s) - materials science , wafer , epitaxy , enhanced data rates for gsm evolution , dopant , amorphous solid , phase (matter) , optoelectronics , crystallography , doping , nanotechnology , chemistry , layer (electronics) , telecommunications , organic chemistry , computer science

The influence of As on the evolution of mask-edge defects during stressed solid phase epitaxy of two-dimensional Si+ pre-amorphized regions in patterned Si wafers was examined. Mask-edge defects ∼60 nm deep formed at 525 °C for As+ implant energies of 7.5–50 keV with peak As concentration of ∼5.0×1020 cm−3. Defect formation was attributed to an As-enhanced [110] regrowth rate relative to the [001] regrowth rate creating an amorphous/crystalline interface geometry favorable for defect formation. The similarity of mask-edge defect depths with As+ implant energy was attributed to surface retardation of [110] regrowth in shallow implants and enhanced [001] regrowth in deeper implants. Results indicate stress effects on regrowth rates are small compared to dopant effects.

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