Open AccessCdTe x-ray sensing driven by electron beam from field emitters
Author(s) -
Yoichiro Neo,
Yoshiaki Ikeda,
Takuya Sakata,
Hisashi Morii,
Kazufumi Shiozawa,
Toru Aoki,
Hidenori Mimura
Publication year - 2007
Publication title -
journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena
Language(s) - English
Resource type - Journals
eISSN - 1520-8567
pISSN - 1071-1023
DOI - 10.1116/1.2432356
Subject(s) - cadmium telluride photovoltaics , common emitter , nanoneedle , diode , optoelectronics , materials science , cathode ray , electron , field (mathematics) , optics , physics , nanotechnology , mathematics , pure mathematics , quantum mechanics , nanostructure
In this paper, a CdTe X-ray sensing device which consists of a CdTe pin diode and a field emitter is fabricated. The CdTe pin diode was fabricated by an excimer laser doping method, which was applied to form an n-type CdTe layer. An indium thin layer was evaporated on the p-type CdTe as a dopant material, and then an n-type CdTe layer was formed by irradiating a KrF laser to the dopant layer in a high-pressure Ar ambient. The field emitter used in this experiment was sputter-induced carbon nanoneedle field emitters. A positive bias voltage of ~200 V was applied to the n-region of the CdTe diode and output currents flowing were measured in the CdTe by supplying an electron beam on the p-region of the CdTe. The electron beam current supplied from the emitter was 10 muA. The output current is shown to be proportional to the X-ray tube current which is also proportional to the X-ray intensity. Also, output current is obtained only when the electron beam is irradiated
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