Open AccessComparison of saturation current characteristics for ultrathin silicon oxides grown on n- and p-type silicon substrates simultaneously
Author(s) -
Tsung-Miau Wang,
Chia-Hua Chang,
Shu-Jau Chang,
JennGwo Hwu
Publication year - 2006
Publication title -
journal of vacuum science and technology a vacuum surfaces and films
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.583
H-Index - 112
eISSN - 1520-8559
pISSN - 0734-2101
DOI - 10.1116/1.2345648
Subject(s) - saturation current , capacitor , saturation (graph theory) , materials science , silicon , oxide , optoelectronics , suboxide , capacitance , current density , analytical chemistry (journal) , voltage , chemistry , electrical engineering , electrode , metallurgy , physics , mathematics , combinatorics , quantum mechanics , chromatography , engineering
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