Open AccessManganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga1−xMnxN
Author(s) -
William E. Fenwick,
Ali Asghar,
Shalini Gupta,
Hun Kang,
Martin Straßburg,
N. Dietz,
Samuel Graham,
Matthew H. Kane,
Ian T. Ferguson
Publication year - 2006
Publication title -
journal of vacuum science and technology a vacuum surfaces and films
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.583
H-Index - 112
eISSN - 1520-8559
pISSN - 0734-2101
DOI - 10.1116/1.2201052
Subject(s) - metalorganic vapour phase epitaxy , chemical vapor deposition , materials science , raman spectroscopy , vacancy defect , manganese , acceptor , analytical chemistry (journal) , crystallography , chemistry , epitaxy , nanotechnology , condensed matter physics , metallurgy , optics , physics , layer (electronics) , chromatography
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