Ion implantation with scanning probe alignment | Zendy

Arun Persaud | Zendy; J. Alexander Liddle | Zendy; T. Schenkel | Zendy; Jeffrey Bokor | Zendy; Tzv. Ivanov | Zendy; Ivo W. Rangelow | Zendy

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Ion implantation with scanning probe alignment

Author(s) -

Arun Persaud,

J. Alexander Liddle,

T. Schenkel,

Jeffrey Bokor,

Tzv. Ivanov,

Ivo W. Rangelow

Publication year - 2005

Publication title -

journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena

Language(s) - English

Resource type - Journals

eISSN - 1520-8567

pISSN - 1071-1023

DOI - 10.1116/1.2062628

Subject(s) - collimated light , cantilever , ion , materials science , focused ion beam , piezoresistive effect , aperture (computer memory) , ion beam , optics , scanning probe microscopy , beam (structure) , optoelectronics , physics , laser , quantum mechanics , acoustics , composite material

We describe a scanning probe instrument which integrates ion beams with the imaging and alignment function of a piezoresistive scanning probe in high vacuum. The beam passes through several apertures and is finally collimated by a hole in the cantilever of the scanning probe. The ion beam spot size is limited by the size of the last aperture. Highly charged ions are used to show hits of single ions in resist, and we discuss the issues for implantation of single ions.

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