Open AccessGrowth of strained Si on high-quality relaxed Si1−xGex with an intermediate Si1−yCy layer
Author(s) -
S. W. Lee,
YuLun Chueh,
L. J. Chen,
L.-J. Chou,
P. S. Chen,
M. H. Lee,
M.J. Tsai,
C. W. Liu
Publication year - 2005
Publication title -
journal of vacuum science and technology a vacuum surfaces and films
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.583
H-Index - 112
eISSN - 1520-8559
pISSN - 0734-2101
DOI - 10.1116/1.1913679
Subject(s) - materials science , overlayer , heterojunction , substrate (aquarium) , layer (electronics) , optoelectronics , dislocation , condensed matter physics , nanotechnology , composite material , oceanography , physics , geology
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