Single ion implantation with scanning probe alignment | Zendy

Arun Persaud | Zendy; Frances I. Allen | Zendy; F. Gicquel | Zendy; S. J. Park | Zendy; J. Alexander Liddle | Zendy; T. Schenkel | Zendy; Tzv. Ivanov | Zendy; K. Ivanova | Zendy; Ivo W. Rangelow | Zendy; Jeffrey Bokor | Zendy

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Single ion implantation with scanning probe alignment

Author(s) -

Arun Persaud,

Frances I. Allen,

F. Gicquel,

S. J. Park,

J. Alexander Liddle,

T. Schenkel,

Tzv. Ivanov,

K. Ivanova,

Ivo W. Rangelow,

Jeffrey Bokor

Publication year - 2004

Publication title -

journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena

Language(s) - English

Resource type - Journals

eISSN - 1520-8567

pISSN - 1071-1023

DOI - 10.1116/1.1802891

Subject(s) - focused ion beam , ion , scanning electron microscope , ion beam , aperture (computer memory) , materials science , electron beam induced deposition , ion beam deposition , ion implantation , ion source , optics , optoelectronics , scanning transmission electron microscopy , chemistry , physics , organic chemistry , acoustics , composite material

We present results from our development of a single ion implantation technique integrated with a scanning force microscope. Accurate alignment at the 5nm level is a crucial requirement for reliable single ion placement. We address this through integration of the ion beam with a scanning probe tip containing an aperture. Single ion registration is based on detection of secondary electron bursts from single, high charge state ions. We describe formation of scanning probe tips with holes and sensing poles by focused ion and electron beam processing (drilling and thin film deposition). Ion transport studies through apertures show stable transmission for >10h with 1nA scale beam intensities on precollimators.

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