Monte Carlo sensitivity analysis of CF2 and CF radical densities in a c-C4F8 plasma | Zendy

Deepak Bose | Zendy; Shahid Rauf | Zendy; David Hash | Zendy; T. R. Govindan | Zendy; M. Meyyappan | Zendy

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Monte Carlo sensitivity analysis of CF2 and CF radical densities in a c-C4F8 plasma

Author(s) -

Deepak Bose,

Shahid Rauf,

David Hash,

T. R. Govindan,

M. Meyyappan

Publication year - 2004

Publication title -

journal of vacuum science and technology a vacuum surfaces and films

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.583

H-Index - 112

eISSN - 1520-8559

pISSN - 0734-2101

DOI - 10.1116/1.1795826

Subject(s) - radical , dissociation (chemistry) , monte carlo method , gas phase , limiting , chemistry , recombination , plasma , electron density , electron , physics , organic chemistry , nuclear physics , mechanical engineering , biochemistry , statistics , mathematics , engineering , gene

A Monte Carlo sensitivity analysis is used to build a plasma chemistry model for octacyclofluorobutane (c‐C4F8) which is commonly used in dielectric etch. Experimental data are used both quantitatively and qualitatively to analyze the gas phase and gas surface reactions for neutral radical chemistry. The sensitivity data of the resulting model identifies a few critical gas phase and surface aided reactions that account for most of the uncertainty in the CF2 and CF radical densities. Electron impact dissociation of small radicals (CF2 and CF) and their surface recombination reactions are found to be the rate-limiting steps in the neutral radical chemistry. The relative rates for these electron impact dissociation and surface recombination reactions are also suggested. The resulting mechanism is able to explain the measurements of CF2 and CF densities available in the literature and also their hollow spatial density profiles.

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