Towards a better understanding of the operative mechanisms underlying impurity-free disordering of GaAs: Effect of stress | Zendy

Sagar P. Doshi | Zendy; Prakash N. K. Deenapanray | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy

Open Access

Towards a better understanding of the operative mechanisms underlying impurity-free disordering of GaAs: Effect of stress

Author(s) -

Sagar P. Doshi,

Prakash N. K. Deenapanray,

Hark Hoe Tan,

C. Jagadish

Publication year - 2003

Publication title -

journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena

Language(s) - English

Resource type - Journals

eISSN - 1520-8567

pISSN - 1071-1023

DOI - 10.1116/1.1535927

Subject(s) - impurity , annealing (glass) , analytical chemistry (journal) , materials science , epitaxy , stress (linguistics) , passivation , vacancy defect , oxide , layer (electronics) , chemistry , nanotechnology , crystallography , composite material , metallurgy , linguistics , philosophy , organic chemistry , chromatography

P. N. K. Deenapanray and H. H. Tan gratefully acknowledge the financial support of the Australian Research Council.

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