Anion exchange at the interfaces of mixed anion III–V heterostructures grown by molecular beam epitaxy | Zendy

Terence D. Brown | Zendy; April S. Brown | Zendy; Gary S. May | Zendy

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Anion exchange at the interfaces of mixed anion III–V heterostructures grown by molecular beam epitaxy

Author(s) -

Terence D. Brown,

April S. Brown,

Gary S. May

Publication year - 2002

Publication title -

journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena

Language(s) - English

Resource type - Journals

eISSN - 1520-8567

pISSN - 1071-1023

DOI - 10.1116/1.1491988

Subject(s) - heterojunction , molecular beam epitaxy , ion , ion exchange , superlattice , epitaxy , diffraction , materials science , crystallography , chemistry , optoelectronics , nanotechnology , optics , physics , organic chemistry , layer (electronics)

High-resolution x-ray diffraction was used to characterize and compare the exchange process at the interfaces of mixed anion heterostructures. Superlattices (SLs) formed by the Sb2 exposure of As-stabilized GaAs surfaces and the As4 exposure of Sb-stabilized GaSb surfaces were grown by molecular beam epitaxy and characterized. Interface composition profiles have been determined using full dynamical simulations of the SL structures that exhibited anion exchange. Comparisons between As-for-Sb exchange on GaSb and Sb-for-As exchange on GaAs are presented in order to better understand the chemical and physical processes that lead to anion exchange.

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