Dynamics of the ion beam induced nitridation of silicon | Zendy

Prakash N. K. Deenapanray | Zendy

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Dynamics of the ion beam induced nitridation of silicon

Author(s) -

Prakash N. K. Deenapanray

Publication year - 2002

Publication title -

journal of vacuum science and technology a vacuum surfaces and films

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.583

H-Index - 112

eISSN - 1520-8559

pISSN - 0734-2101

DOI - 10.1116/1.1481045

Subject(s) - ion , nitride , silicon nitride , ion beam , silicon , atomic physics , materials science , beam (structure) , range (aeronautics) , secondary ion mass spectrometry , ion beam mixing , stoichiometry , ion beam deposition , analytical chemistry (journal) , chemistry , layer (electronics) , optics , optoelectronics , physics , nanotechnology , organic chemistry , chromatography , composite material

High-resolution Rutherford backscattering and channeling has been used to study the energy and angular dependence of the ion beam induced nitridation of Si in a secondary ion mass spectrometry system. The nitridation of Si is characterized by two critical angles θc1 and θc2, corresponding to the formation of stoichiometric and overstoichiometric Si-nitride layers, respectively. For the N2+ bombardment in the 10 to 13.5 keV range, θc1 changes from 40° to 45°, while θc2 changes from 28° to 30°. Further, strong oscillations in the secondary ion signal, observed for angles of incidence below θc2, are directly related to charging of the Si-nitride surface. We demonstrate that the response of the Si-nitride layer under ion bombardment during the transient stage of nitridation can be described by a second order differential equation.

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