Open AccessBreakdown characteristics of ultrathin gate oxides (<4 nm) in metal–oxide–semiconductor structure subjected to substrate injection
Author(s) -
Chia-Hong Huang,
JennGwo Hwu
Publication year - 2001
Publication title -
journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena
Language(s) - English
Resource type - Journals
eISSN - 1520-8567
pISSN - 1071-1023
DOI - 10.1116/1.1403441
Subject(s) - oxide , materials science , time dependent gate oxide breakdown , substrate (aquarium) , gate oxide , dielectric strength , metal , equivalent oxide thickness , optoelectronics , gate dielectric , breakdown voltage , dielectric , semiconductor , voltage , electrical engineering , transistor , metallurgy , oceanography , engineering , geology
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