Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy | Zendy

Kyoung Jin Choi | Zendy; J.-L. Lee | Zendy

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Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy

Author(s) -

Kyoung Jin Choi,

J.-L. Lee

Publication year - 2001

Publication title -

journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena

Language(s) - English

Resource type - Journals

eISSN - 1520-8567

pISSN - 1071-1023

DOI - 10.1116/1.1368679

Subject(s) - deep level transient spectroscopy , surface states , materials science , spectroscopy , fermi level , schottky barrier , capacitance , atomic physics , transistor , electron , electrode , optoelectronics , analytical chemistry (journal) , surface (topology) , chemistry , physics , silicon , geometry , mathematics , quantum mechanics , diode , voltage , chromatography

Capacitance deep-level transient spectroscopy (DLTS) was used to study surface states on aluminum compounds. Two hole-like traps were observed in pseudomorphic high-electron-mobility transistor with a multifinger gate. No hole-like signals were observed in the DLTS spectra of the fat field-effect transistor (FATFET) having negligible ratio of the ungated surface to the total area between the source and the drain. The activation energies of both surface states were measured to be 0.50±0.03 and 0.81±0.01 eV.open6

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