Growth of GaInTlAs layers on InP by molecular beam epitaxy | Zendy

F. Sánchez-Almazán | Zendy; M. Gendry | Zendy; Philippe Régreny | Zendy; E. Bergignat | Zendy; G. Grenet | Zendy; G. Hollinger | Zendy; J. Olivares | Zendy; G. Brémond | Zendy; Olivier Marty | Zendy; M. Pitaval | Zendy; B. Canut | Zendy

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Growth of GaInTlAs layers on InP by molecular beam epitaxy

Author(s) -

F. Sánchez-Almazán,

M. Gendry,

Philippe Régreny,

E. Bergignat,

G. Grenet,

G. Hollinger,

J. Olivares,

G. Brémond,

Olivier Marty,

M. Pitaval,

B. Canut

Publication year - 2001

Publication title -

journal of vacuum science and technology a vacuum surfaces and films

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.583

H-Index - 112

eISSN - 1520-8559

pISSN - 0734-2101

DOI - 10.1116/1.1359530

Subject(s) - thallium , molecular beam epitaxy , arsenic , amorphous solid , crystallite , analytical chemistry (journal) , materials science , substrate (aquarium) , epitaxy , growth rate , matrix (chemical analysis) , crystal growth , diffusion , chemistry , crystallography , nanotechnology , layer (electronics) , metallurgy , composite material , oceanography , geometry , mathematics , physics , chromatography , geology , thermodynamics

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