Open AccessStudy of current leakage in InAs p–i–n photodetectors
Author(s) -
RayMing Lin,
ShiangFeng Tang,
Chieh-Hsiung Kuan
Publication year - 2000
Publication title -
journal of vacuum science and technology b microelectronics and nanometer structures processing measurement and phenomena
Language(s) - English
Resource type - Journals
eISSN - 1520-8567
pISSN - 1071-1023
DOI - 10.1116/1.1319693
Subject(s) - dark current , photodiode , diode , optoelectronics , reverse leakage current , photodetector , materials science , reverse bias , p–n junction , leakage (economics) , layer (electronics) , semiconductor , nanotechnology , schottky diode , economics , macroeconomics
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