Open AccessFTIR Spectroscopy Characterization of Si-C bonding in SiC Thin Film prepared at Room Temperature by Conventional 13.56MHz RF PECVD
Author(s) -
Muhammad Firdaus Omar,
Abd Khamim Ismail,
Imam Sumpono,
Emilly Albert Alim,
Mohd Nazri Nawi,
Mohd ‘Azizir -Rahim Mukri,
Zulkafli Othaman,
Samsudi Sakrani
Publication year - 2012
Publication title -
malaysian journal of fundamental and applied sciences
Language(s) - English
Resource type - Journals
ISSN - 2289-599X
DOI - 10.11113/mjfas.v8n4.156
Subject(s) - plasma enhanced chemical vapor deposition , materials science , silane , substrate (aquarium) , thin film , wafer , analytical chemistry (journal) , fourier transform infrared spectroscopy , chemical vapor deposition , silicon carbide , chemical engineering , nanotechnology , chemistry , composite material , organic chemistry , oceanography , geology , engineering
SiC thin film has been synthesized by using conventional 13.56MHz radio frequency plasma enhanced chemical vapour deposition (PECVD). The mixture of silane (SiH4) and methane (CH4) were used as precursor gases while hydrogen as carrier gas. The SiH4/CH4 ratio and the substrate temperature have been varied in order to examine the reaction of the active species which can produce the Si-C bonding in the deposited film. FTIR spectroscopy was used to analyse the type of bonding and particularly to confirm the existence of Si-C bonding by comparing the spectrums obtained from deposited thin film samples and standard reference sample of bulk SiC single crystal wafer. The existence of Si-C bonding was confirmed and it was slightly shifted from the bulk SiC wafer at around 722cm-1 and 817cm-1.
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