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Electronic and structural properties of wurtzite III-V and II-VI structures
Author(s) -
Y. AlDouri,
H. Khachai,
R. Khenata,
Ahmed Addou
Publication year - 2014
Publication title -
malaysian journal of fundamental and applied sciences
Language(s) - English
Resource type - Journals
ISSN - 2289-599X
DOI - 10.11113/mjfas.v3n2.31
Subject(s) - wurtzite crystal structure , pseudopotential , materials science , crystallography , band gap , condensed matter physics , electronic structure , electronic band structure , chemistry , optoelectronics , physics , hexagonal crystal system
The electronic and structural properties of wurtzite InN, ZnS and CdSe structures are studied using the empirical pseudopotential method (EPM). The principal energy at Γ of wurtzite InN, ZnS and CdSe compounds are calculated. Band structure of wurtzite InN, ZnS and CdSe materials are presented. Other quantity such as bulk modules by means of our model is calculated.

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