
Silicon monosulphide radiative association
Author(s) -
Andreazza C. M.,
Marinho E. P.
Publication year - 2007
Publication title -
monthly notices of the royal astronomical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.058
H-Index - 383
eISSN - 1365-2966
pISSN - 0035-8711
DOI - 10.1111/j.1365-2966.2007.12081.x
Subject(s) - radiative transfer , silicon , physics , supernova , astrophysics , optics , optoelectronics
Rate coefficients for radiative association of silicon and sulphur atoms to form silicon monosulphide (SiS) molecule are estimated. The radiative association is due mainly to approach in the E 1 Σ + and A 1 Π states of SiS. For temperatures ranging from ∼1000 to ∼14 000 K, the rate coefficients are found to vary from 8.43 × 10 −17 to 2.69 × 10 −16 cm 3 s −1 . Our calculated rate coefficient is higher than the values used in modelling the chemistry of Type Ia supernovae.