
Radiative association of C and P, and Si and P atoms
Author(s) -
Andreazza C. M.,
Marinho E. P.,
Singh P. D.
Publication year - 2006
Publication title -
monthly notices of the royal astronomical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.058
H-Index - 383
eISSN - 1365-2966
pISSN - 0035-8711
DOI - 10.1111/j.1365-2966.2006.10964.x
Subject(s) - radiative transfer , physics , range (aeronautics) , atomic physics , carbon fibers , astrophysics , optics , composite number , materials science , composite material
The rate coefficients for the formation of carbon monophosphide (CP) and silicon monophosphide (SiP) by radiative association are estimated for temperatures ranging from 300 to 14 100 K. In this temperature range, the radiative association rate coefficients are found to vary from 1.14 × 10 −18 to 1.62 × 10 −18 cm 3 s −1 and from 3.73 × 10 −20 to 7.03 × 10 −20 cm 3 s −1 for CP and SiP, respectively. In both cases, rate coefficients increase slowly with the increase in temperature.