Open AccessA Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices
Author(s) -
Sonia Peréz,
Ramchandra Kotecha,
Arman Ur Rashid,
Md Maksudul Hossain,
Tom Vrotsos,
A. Matthew Francis,
H. Alan Mantooth,
Enrico Santi,
J.L. Hudgins
Publication year - 2018
Publication title -
ieee transactions on power electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.159
H-Index - 266
eISSN - 1941-0107
pISSN - 0885-8993
DOI - 10.1109/tpel.2018.2889263
Subject(s) - datasheet , insulated gate bipolar transistor , jfet , electronic engineering , power electronics , channel (broadcasting) , transistor model , electrical engineering , logic gate , spice , computer science , inverter , transistor , voltage , engineering , field effect transistor
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom