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We report losses from charging and discharging the parasitic output capacitor,    ${\rm C}_{\rm OSS}$  , in Gallium Nitride (GaN) power devices with voltage ratings over 600&#x00A0;  ${\rm V}_{\rm DS}$   . These losses are of particular importance in soft-switched circuits used at MHz switching frequencies, where the output capacitance of the device is charged and discharged once per switching cycle during the device&#x0027;s off-time. This process is assumed lossless. We measure   ${\rm C}_{\rm OSS}$    losses from 5&#x2013;35&#x00A0;MHz sine, square, and Class-   $\Phi _{2}$   waveshapes in enhancement-mode and cascode devices, and find that losses are present in all tested devices, equal or greater than conduction losses at MHz frequencies, and exponentially increasing with   $\mathbf{dV/dt}$  . The cascode device outperforms the e-mode devices under 300&#x00A0;V, but the e-mode devices are preferred above this operating voltage. Furthermore, we show that, within a device family, losses scale linearly with output energy storage. Packaging appears to have only a minor effect on these losses. Finally, we demonstrate 10&#x00A0;MHz, 200&#x00A0;W dc&#x2013;dc converters with varying device configurations, showing that, even with constant circulating currents, moving to larger devices with lower   ${\rm R}_{\rm DS,ON}$    actually degrades efficiency in certain applications due to    ${\rm C}_{\rm OSS}$   losses. In the high-voltage, high-frequency range, these reported losses must be optimized simultaneously with conduction losses on a per-application basis.

C OSS Losses in 600 V GaN Power Semiconductors in Soft-Switched, High- and Very-High-Frequency Power Converters