Performance Enhancement of the nMOSFET Low-Noise Amplifier by Package Strain | Zendy

W.-C. Hua | Zendy; H.-L. Chang | Zendy; T. Wang | Zendy; C.-Y. Lin | Zendy; C.-P. Lin | Zendy; S. S. Lu | Zendy; C. C. Meng | Zendy; C. W. Liu | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Performance Enhancement of the nMOSFET Low-Noise Amplifier by Package Strain

Author(s) -

W.-C. Hua,

H.-L. Chang,

T. Wang,

C.-Y. Lin,

C.-P. Lin,

S. S. Lu,

C. C. Meng,

C. W. Liu

Publication year - 2006

Publication title -

ieee transactions on electron devices

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.828

H-Index - 186

eISSN - 1557-9646

pISSN - 0018-9383

DOI - 10.1109/ted.2006.887194

Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas

The package strain improves the noise figure (NF) of the low-noise amplifier (LNA). The maximum noise reduction is $\sim$ 0.53 dB (13%) at the operating frequency of 2.4 GHz under the biaxial tensile strain of 0.037%. The NF reduction of the strained LNA is mainly due to the enhanced transconductance and cutoff frequency of the individual nMOSFET device under the same strain and bias conditions.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research