A 25–35 GHz Neutralized Continuous Class-F CMOS Power Amplifier for 5G Mobile Communications Achieving 26% Modulation PAE at 1.5 Gb/s and 46.4% Peak PAE | Zendy

Sheikh Nijam Ali | Zendy; Pawan Agarwal | Zendy; Srinivasan Gopal | Zendy; Shahriar Mirabbasi | Zendy; Deukhyoun Heo | Zendy

Open Access

A 25–35 GHz Neutralized Continuous Class-F CMOS Power Amplifier for 5G Mobile Communications Achieving 26% Modulation PAE at 1.5 Gb/s and 46.4% Peak PAE

Author(s) -

Sheikh Nijam Ali,

Pawan Agarwal,

Srinivasan Gopal,

Shahriar Mirabbasi,

Deukhyoun Heo

Publication year - 2018

Publication title -

ieee transactions on circuits and systems i regular papers

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.861

H-Index - 163

eISSN - 1558-0806

pISSN - 1549-8328

DOI - 10.1109/tcsi.2018.2860019

Subject(s) - amplifier , cmos , electrical engineering , adjacent channel , power added efficiency , rf power amplifier , dbc , materials science , extremely high frequency , optoelectronics , engineering , telecommunications

This paper presents a high-efficiency neutralized continuous class-F (CCF) CMOS power amplifier (PA) design technique for millimeter-wave (mmW) 5G mobile communications. A parasitic-aware tuned-load with a high-order harmonicresonance network is proposed to shape the current and voltage waveforms for the CCF PA. At mmW frequencies, the gate- drain capacitance (Cgd) creates adverse capacitive loadi...

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