Open AccessA new very high voltage semiconductor switch
Author(s) -
Gale R. Sundberg
Publication year - 2015
Publication title -
1985 ieee power electronics specialists conference
Language(s) - English
Resource type - Conference proceedings
ISSN - 0275-9306
DOI - 10.1109/pesc.1985.7070957
Subject(s) - power, energy and industry applications , components, circuits, devices and systems
A new family of semiconductor switches using double injection techniques and compensated deep impurities is described. They have the potential to raise switching voltages a factor of ten higher (up to 100 kV) than p-n junction devices while exhibiting extremely low (or zero) forward voltage. Several potential power switching applications are indicated.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom