Open AccessApplication of transistor emitter-open turn-off scheme to high voltage power inverters
Author(s) -
Dan Y. Chen,
John P. Walden
Publication year - 2015
Publication title -
1981 ieee power electronics specialists conference
Language(s) - English
Resource type - Conference proceedings
pISSN - 0275-9306
DOI - 10.1109/pesc.1981.7083646
Subject(s) - power, energy and industry applications
Transistor emitter-open turn-off scheme has been implemented in an experimental operating high voltage power inverter. Using such a turn-off scheme, not only the transistor turn-off speed greatly increased but also the reverse-biased second breakdown phenomenon is eliminated. Therefore, the very same device can be fully utilized for higher voltage and higher frequency applications.
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