M-STORM reliability model applied to DSM technologies

Failure mechanisms described in JEDEC publication JEP122G constitute commonly accepted models for silicon device physics of failure. Such models are generally described in term of stress parameters and/or specifically measured drift parameters; however, they consider only a single stress condition, single parameter signature and single failure mechanism at a time. When considering new disruptive technologies for deep submicron integrated circuits, the shrinkage of geometries (down and lower than the 20 nm range) induces shrinkage of electrical parameter limits and condition of use may produce multiple-stress in operation jointly producing multiple failure mechanisms concurrently. This paper is related to the generalized Reliability Model for semiconductor devices called M-STORM for Multi-phySics mulTi-stressOrs predictive Reliability Model.