Open AccessDemonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics
Author(s) -
Kai Fu,
Houqiang Fu,
Xuanqi Huang,
Hong Chen,
Tsung-Han Yang,
Jossue Montes,
Chen Yang,
Jingan Zhou,
Yuji Zhao
Publication year - 2019
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2019.2941830
Subject(s) - metalorganic vapour phase epitaxy , breakdown voltage , leakage (economics) , optoelectronics , materials science , etching (microfabrication) , dry etching , chemical vapor deposition , gallium nitride , analytical chemistry (journal) , voltage , nanotechnology , electrical engineering , chemistry , epitaxy , engineering , layer (electronics) , economics , macroeconomics , chromatography
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom