Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach | Zendy

Alexander Makarov | Zendy; B. Kaczer | Zendy; Adrian Chasin | Zendy; Michiel Vandemaele | Zendy; E. Bury | Zendy; Markus Jech | Zendy; Alexander Grill | Zendy; Geert Hellings | Zendy; Al-Moatasem El-Sayed | Zendy; Tibor Grasser | Zendy; Dimitri Linten | Zendy; Stanislav Tyaginov | Zendy

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Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach

Author(s) -

Alexander Makarov,

B. Kaczer,

Adrian Chasin,

Michiel Vandemaele,

E. Bury,

Markus Jech,

Alexander Grill,

Geert Hellings,

Al-Moatasem El-Sayed,

Tibor Grasser,

Dimitri Linten,

Stanislav Tyaginov

Publication year - 2019

Publication title -

ieee electron device letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.337

H-Index - 154

eISSN - 1558-0563

pISSN - 0741-3106

DOI - 10.1109/led.2019.2933729

Subject(s) - stress (linguistics) , degradation (telecommunications) , trap (plumbing) , voltage , boltzmann equation , cumulative distribution function , materials science , modal analysis , physics , computational physics , electronic engineering , probability density function , electrical engineering , mathematics , statistics , engineering , finite element method , thermodynamics , philosophy , linguistics , meteorology

We present a statistical analysis of the cumulative impact of random traps (RTs) and dopants (RDs) on hot-carrier degradation (HCD) in n-channel FinFETs. Calculations are performed at three combinations of high stress voltages and for conditions close to the operating regime. We generate 200 different configurations of devices with RDs and subsequently solve the Boltzmann transport equation to obtain the continuous interface trap concentration

${N} _{\text {it}}$

. These deterministic densities

${N} _{\text {it}}$

for each individual configuration are randomized and converted to 200 different configurations of RTs, yielding a total amount of 40,000 samples in our study. The analysis shows that at high stress voltages (with both RTs and RDs taken into account) probability densities of linear drain currents and device lifetimes are close to a bi-modal normal distribution, while in the operating regime such a trend is not visible.

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