Open AccessStochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs
Author(s) -
Alexander Makarov,
B. Kaczer,
Philippe Roussel,
Adrian Chasin,
Alexander Grill,
Michiel Vandemaele,
Geert Hellings,
Al-Moatasem El-Sayed,
Tibor Grasser,
Dimitri Linten,
Stanislav Tyaginov
Publication year - 2019
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2019.2913625
Subject(s) - extrapolation , degradation (telecommunications) , materials science , dopant , stress (linguistics) , transistor , threshold voltage , mosfet , statistical physics , voltage , electronic engineering , doping , optoelectronics , physics , mathematics , electrical engineering , statistics , engineering , linguistics , philosophy
Using the deterministic version of our hot-carrier degradation (HCD) model, we perform a statistical analysis of the impact of random dopants (RDs) on the HCD in n-FinFETs. For this, we use an ensemble of 200 transistors with different configurations of RDs. Our analysis shows that changes in the linear drain currents have broad distributions, thereby resulting in broad distributions of device lifetimes. While lifetimes are nearly normally distributed at high stress biases, under voltages close to the operating regime, the distribution has a substantially different shape. This observation considerably complicates extrapolation from accelerated stress conditions, thereby suggesting that a comprehensive statistical treatment of the impact of RDs is required.
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