Open AccessImpact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET
Author(s) -
Gabriel Espiñeira,
Daniel Nagy,
Guillermo Indalecio,
Antonio J. GarcíaLoureiro,
K. Kálna,
Natalia Seoane
Publication year - 2019
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2019.2900494
Subject(s) - threshold voltage , nanowire , metal gate , materials science , mosfet , optoelectronics , physics , analytical chemistry (journal) , gate oxide , voltage , chemistry , transistor , quantum mechanics , chromatography
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