Open AccessPhysical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET
Author(s) -
François Boige,
D. Trémouilles,
Frédéric Richardeau
Publication year - 2019
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2019.2896939
Subject(s) - mosfet , materials science , electrical engineering , optoelectronics , schottky diode , logic gate , power mosfet , gate dielectric , current (fluid) , silicon carbide , dielectric , surge , short circuit , voltage , engineering , transistor , diode , metallurgy
During the short circuit of a vertical 4H-SiC power MOSFET, a high gate current starts to flow through the gate dielectric. We demonstrate that the Schottky emission is the main physical mechanisms.
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